IRFB16N50K
- Mfr.Part #
- IRFB16N50K
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 17A TO220AB
- Stock
- 16,023
- In Stock :
- 16,023
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.41mm
- Input Capacitance :
- 2.21nF
- Rds On (Max) @ Id, Vgs :
- 350mOhm @ 10A, 10V
- Rds On Max :
- 350 mΩ
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 30 ns
- Drain to Source Resistance :
- 350mOhm
- Weight :
- 6.000006g
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 20 ns
- Turn-Off Delay Time :
- 38 ns
- Height :
- 9.01mm
- Voltage - Rated DC :
- 500V
- Mount :
- Through Hole
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Lead Free :
- Contains Lead
- Supplier Device Package :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 77ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 17A
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±30V
- Published :
- 2009
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- Width :
- 4.7mm
- Current Rating :
- 17A
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 280W Tc
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- IRFB16N50K
N-Channel Tube 350mOhm @ 10A, 10V ±30V 2210pF @ 25V 89nC @ 10V 500V TO-220-3
IRFB16N50K Overview
The maximum input capacitance of this device is 2210pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 350mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFB16N50K Features
a continuous drain current (ID) of 17A
the turn-off delay time is 38 ns
single MOSFETs transistor is 350mOhm
a 500V drain to source voltage (Vdss)
IRFB16N50K Applications
There are a lot of Vishay Siliconix
IRFB16N50K applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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