IRFB11N50APBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Through Hole

Input Capacitance :

1.423nF

Current Rating :

11A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

500V

Supplier Device Package :

TO-220AB

Number of Elements :

1

Rise Time :

35ns

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Voltage - Rated DC :

500V

Height :

9.01mm

Rds On Max :

520 mΩ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Factory Lead Time :

11 Weeks

Weight :

6.000006g

Continuous Drain Current (ID) :

11A

Width :

4.7mm

Drain to Source Resistance :

520mOhm

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Resistance :

520mOhm

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Lead Free :

Lead Free

Threshold Voltage :

4V

Number of Pins :

3

Fall Time (Typ) :

28 ns

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Power Dissipation-Max :

170W Tc

Published :

2009

Length :

10.41mm

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

32 ns

Power Dissipation :

170W

Vgs (Max) :

±30V

Min Operating Temperature :

-55°C

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Radiation Hardening :

No