IRFB18N50K

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Height :

9.01mm

RoHS Status :

Non-RoHS Compliant

Published :

2016

Radiation Hardening :

No

Number of Pins :

3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Turn On Delay Time :

22 ns

Drain to Source Voltage (Vdss) :

500V

Length :

10.41mm

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3

Power Dissipation-Max :

220W Tc

Input Capacitance :

2.83nF

Weight :

6.000006g

Rds On Max :

290 mΩ

Element Configuration :

Single

Power Dissipation :

220W

Number of Channels :

1

Width :

4.7mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Resistance :

290mOhm

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Number of Elements :

1

Continuous Drain Current (ID) :

17A

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

290mOhm @ 10A, 10V

Rise Time :

60ns

Supplier Device Package :

TO-220AB