IRFB5620PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rds On Max :

72.5 mΩ

Width :

4.826mm

Number of Pins :

3

Drain to Source Resistance :

72.5mOhm

Length :

10.668mm

Element Configuration :

Single

Fall Time (Typ) :

9.9 ns

Vgs(th) (Max) @ Id :

5V @ 100µA

Drain to Source Breakdown Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

17.1 ns

Mounting Type :

Through Hole

Rise Time :

14.6ns

Number of Elements :

1

Threshold Voltage :

5V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

72.5mOhm @ 15A, 10V

Height :

9.02mm

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Turn On Delay Time :

8.6 ns

Factory Lead Time :

12 Weeks

Resistance :

72.5mOhm

Dual Supply Voltage :

200V

Nominal Vgs :

5 V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Power Dissipation-Max :

144W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Termination :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Contact Plating :

Tin

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Max Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

200V

Published :

2007

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Power Dissipation :

144W

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

25A

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-220AB

REACH SVHC :

No SVHC

Packaging :

Tube

Input Capacitance :

1.71nF

Mount :

Through Hole