IRFB4620PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

200V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-3

Turn On Delay Time :

13.4 ns

Number of Elements :

1

Vgs (Max) :

±20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

72.5m Ω @ 15A, 10V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Turn-Off Delay Time :

25.4 ns

Rise Time :

22.4ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

ECCN Code :

EAR99

Length :

10.668mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Resistance :

72.5mOhm

Nominal Vgs :

3 V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

144W Tc

FET Type :

N-Channel

Continuous Drain Current (ID) :

25A

Height :

9.02mm

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Termination :

Through Hole

Fall Time (Typ) :

14.8 ns

REACH SVHC :

No SVHC

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Number of Terminations :

3

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 100µA

Width :

4.826mm

Published :

2008

Power Dissipation :

144W

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Number of Pins :

3