IRFB4321PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

83A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

150V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4460pF @ 50V

Case Connection :

DRAIN

ECCN Code :

EAR99

Voltage - Rated DC :

150V

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

83A

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Termination :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Height :

9.02mm

Vgs (Max) :

±30V

Rise Time :

60ns

RoHS Status :

ROHS3 Compliant

Width :

4.82mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

150V

Number of Terminations :

3

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Threshold Voltage :

5V

Length :

10.6426mm

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Fall Time (Typ) :

35 ns

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

75A

Published :

2008

Recovery Time :

130 ns

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

15m Ω @ 33A, 10V

Packaging :

Tube

Number of Elements :

1

Power Dissipation :

330mW

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

350W Tc

Nominal Vgs :

5 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Turn-Off Delay Time :

25 ns

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V