IRFB31N20DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

38ns

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Published :

1998

Drain to Source Breakdown Voltage :

200V

Series :

HEXFET®

Dual Supply Voltage :

200V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Lead Free :

Contains Lead, Lead Free

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Number of Terminations :

3

Turn-Off Delay Time :

26 ns

FET Type :

N-Channel

Resistance :

82mOhm

Avalanche Energy Rating (Eas) :

420 mJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

250

Power Dissipation :

200W

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Turn On Delay Time :

16 ns

Nominal Vgs :

5.5 V

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Termination :

Through Hole

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

82m Ω @ 18A, 10V

Recovery Time :

300 ns

Element Configuration :

Single

Height :

8.763mm

Length :

10.5156mm

Threshold Voltage :

5.5V

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Continuous Drain Current (ID) :

31A

Contact Plating :

Tin

Mounting Type :

Through Hole

Current Rating :

31A

Packaging :

Tube

Case Connection :

DRAIN

Radiation Hardening :

No

Power Dissipation-Max :

3.1W Ta 200W Tc

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

200V