IRF7309PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

MS-012AA

Power - Max :

1.4W

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pulsed Drain Current-Max (IDM) :

16A

Additional Feature :

ULTRA LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

4A

Power Dissipation-Max (Abs) :

1.4W

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

FET Type :

N and P-Channel

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

Base Part Number :

IRF7309PBF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Transistor Application :

SWITCHING

Published :

2004

Terminal Form :

Gull wing

Number of Terminations :

8

Packaging :

Tube