IRF7101PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Pulsed Drain Current-Max (IDM) :

14A

Drain-source On Resistance-Max :

0.1Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

IRF7101PBF

Power - Max :

2W

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Surface Mount :

yes

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.5A

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

3.5A

Power Dissipation-Max (Abs) :

2W

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Published :

1997

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Packaging :

Tube