IRF7101PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

14A

Drain Current-Max (Abs) (ID) :

3.5A

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Drain-source On Resistance-Max :

0.1Ohm

Power - Max :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HEXFET®

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

2W

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Drain to Source Voltage (Vdss) :

20V

Published :

1997

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

3.5A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Base Part Number :

IRF7101PBF