IRF710

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Mfr.Part #
IRF710
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 2A TO220AB
Stock
5,419
In Stock :
5,419

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Fall Time (Typ) :
11 ns
Drain to Source Breakdown Voltage :
400V
Vgs (Max) :
±20V
Input Capacitance :
170pF
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Element Configuration :
Single
Power Dissipation-Max :
36W Tc
Width :
4.7mm
Min Operating Temperature :
-55°C
Height :
9.01mm
Weight :
6.000006g
RoHS Status :
Non-RoHS Compliant
Rise Time :
9.9ns
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Resistance :
3.6Ohm
Continuous Drain Current (ID) :
2A
Current Rating :
2A
Package / Case :
TO-220-3
Number of Pins :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Rds On (Max) @ Id, Vgs :
3.6Ohm @ 1.2A, 10V
Rds On Max :
3.6 Ω
Supplier Device Package :
TO-220AB
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 25V
Length :
10.41mm
Drain to Source Voltage (Vdss) :
400V
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Turn-Off Delay Time :
21 ns
Voltage - Rated DC :
400V
Mount :
Through Hole
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Radiation Hardening :
No
Turn On Delay Time :
8 ns
Packaging :
Tube
Lead Free :
Contains Lead
Published :
2016
Datasheets
IRF710
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF710 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRF710 pinout, IRF710 datasheet PDF, IRF710 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF710 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF710


N-Channel Tube 3.6Ohm @ 1.2A, 10V ±20V 170pF @ 25V 17nC @ 10V 400V TO-220-3

IRF710 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 170pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.6Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF710 Features


a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a 400V drain to source voltage (Vdss)


IRF710 Applications


There are a lot of Vishay Siliconix
IRF710 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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