IRF710

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Mfr.Part #
IRF710
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 2A TO220AB
Stock
19,500
In Stock :
19,500

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.41mm
Drain to Source Resistance :
3.6Ohm
Rds On Max :
3.6 Ω
Rise Time :
9.9ns
Radiation Hardening :
No
Number of Channels :
1
Published :
2016
Package / Case :
TO-220-3
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
400V
Width :
4.7mm
Max Operating Temperature :
150°C
Height :
9.01mm
Input Capacitance :
170pF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Fall Time (Typ) :
11 ns
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 25V
Number of Pins :
3
Turn-Off Delay Time :
21 ns
Min Operating Temperature :
-55°C
Current Rating :
2A
Lead Free :
Contains Lead
Rds On (Max) @ Id, Vgs :
3.6Ohm @ 1.2A, 10V
Continuous Drain Current (ID) :
2A
Weight :
6.000006g
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Turn On Delay Time :
8 ns
RoHS Status :
Non-RoHS Compliant
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
400V
Voltage - Rated DC :
400V
Supplier Device Package :
TO-220AB
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
36W Tc
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Mount :
Through Hole
Datasheets
IRF710
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor IRF710 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRF710 pinout, IRF710 datasheet PDF, IRF710 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor IRF710 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor IRF710


N-Channel Tube 3.6Ohm @ 1.2A, 10V ±20V 170pF @ 25V 17nC @ 10V 400V TO-220-3

IRF710 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 170pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.6Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF710 Features


a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a 400V drain to source voltage (Vdss)


IRF710 Applications


There are a lot of Vishay Siliconix
IRF710 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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