IRF710
- Mfr.Part #
- IRF710
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 2A TO220AB
- Stock
- 19,500
- In Stock :
- 19,500
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.41mm
- Drain to Source Resistance :
- 3.6Ohm
- Rds On Max :
- 3.6 Ω
- Rise Time :
- 9.9ns
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Published :
- 2016
- Package / Case :
- TO-220-3
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 400V
- Width :
- 4.7mm
- Max Operating Temperature :
- 150°C
- Height :
- 9.01mm
- Input Capacitance :
- 170pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 11 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 21 ns
- Min Operating Temperature :
- -55°C
- Current Rating :
- 2A
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 3.6Ohm @ 1.2A, 10V
- Continuous Drain Current (ID) :
- 2A
- Weight :
- 6.000006g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Turn On Delay Time :
- 8 ns
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 400V
- Voltage - Rated DC :
- 400V
- Supplier Device Package :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 36W Tc
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Datasheets
- IRF710

N-Channel Tube 3.6Ohm @ 1.2A, 10V ±20V 170pF @ 25V 17nC @ 10V 400V TO-220-3
IRF710 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 170pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.6Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF710 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a 400V drain to source voltage (Vdss)
IRF710 Applications
There are a lot of Vishay Siliconix
IRF710 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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