IRF7101TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

14A

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

24 ns

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

20V

JESD-609 Code :

e3

Series :

HEXFET®

Length :

4.9784mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

30 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2W

Resistance :

100MOhm

Row Spacing :

6.3 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

3 V

REACH SVHC :

No SVHC

Width :

3.9878mm

Rise Time :

10ns

Voltage - Rated DC :

20V

Published :

1997

Height :

1.4986mm

Mount :

Surface Mount

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Power Rating :

2W

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Current Rating :

3.5A

Continuous Drain Current (ID) :

3.5A

Gate to Source Voltage (Vgs) :

12V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Base Part Number :

IRF7101PBF

Element Configuration :

Dual

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Terminal Form :

Gull wing

Dual Supply Voltage :

20V

Number of Pins :

8