IRF7103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Dual Supply Voltage :

50V

Drain to Source Breakdown Voltage :

50V

Rise Time :

8ns

Radiation Hardening :

No

Number of Terminations :

8

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current Rating :

3A

Power Dissipation :

2W

Contact Plating :

Tin

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

2

Turn-Off Delay Time :

15 ns

Manufacturer Package Identifier :

IRF7103TRPBF

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Lead Free :

Contains Lead, Lead Free

Resistance :

130mOhm

Turn On Delay Time :

5.1 ns

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Continuous Drain Current (ID) :

3A

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Threshold Voltage :

3V

Fall Time (Typ) :

25 ns

Nominal Vgs :

3 V

Transistor Application :

SWITCHING

Length :

4.9784mm

Number of Pins :

8

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

Recovery Time :

100 ns

Drain Current-Max (Abs) (ID) :

3A

Row Spacing :

6.3 mm

JESD-609 Code :

e3

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W

Width :

3.9878mm

Base Part Number :

IRF7103PBF

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

50V

Vgs(th) (Max) @ Id :

3V @ 250µA