IRF7103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Number of Pins :

8

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Dual Supply Voltage :

50V

Element Configuration :

Dual

Base Part Number :

IRF7103PBF

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Recovery Time :

100 ns

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Width :

3.9878mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Manufacturer Package Identifier :

IRF7103TRPBF

Length :

4.9784mm

Voltage - Rated DC :

50V

Rise Time :

8ns

Resistance :

130mOhm

Current Rating :

3A

Drain Current-Max (Abs) (ID) :

3A

Drain to Source Breakdown Voltage :

50V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Height :

1.4986mm

Lead Free :

Contains Lead, Lead Free

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

3V

Turn-Off Delay Time :

15 ns

Published :

1997

Terminal Form :

Gull wing

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn On Delay Time :

5.1 ns

Continuous Drain Current (ID) :

3A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Transistor Element Material :

SILICON

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Power Dissipation :

2W

Number of Terminations :

8

Row Spacing :

6.3 mm

Nominal Vgs :

3 V

Contact Plating :

Tin