IRF710

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

2A

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

21 ns

Package / Case :

TO-220-3

Length :

10.41mm

Number of Channels :

1

Voltage - Rated DC :

400V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2016

Vgs (Max) :

±20V

Power Dissipation-Max :

36W Tc

Current Rating :

2A

Width :

4.7mm

Number of Pins :

3

Supplier Device Package :

TO-220AB

Rise Time :

9.9ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Rds On Max :

3.6 Ω

Weight :

6.000006g

Drain to Source Resistance :

3.6Ohm

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

3.6Ohm @ 1.2A, 10V

Mounting Type :

Through Hole

Fall Time (Typ) :

11 ns

Drain to Source Voltage (Vdss) :

400V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Input Capacitance :

170pF

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Height :

9.01mm

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

400V