IRF7105PBF
- Mfr.Part #
- IRF7105PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 25V 8-SOIC
- Stock
- 1,735
- In Stock :
- 1,735
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- Standard
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Peak Reflow Temperature (Cel) :
- 260
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 2W
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 3.5A
- Series :
- HEXFET®
- Pulsed Drain Current-Max (IDM) :
- 14A
- Published :
- 2003
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- IRF7105PBF
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A 2.3A
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 1A, 10V
- JEDEC-95 Code :
- MS-012AA
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Number of Terminations :
- 8
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- JESD-30 Code :
- R-PDSO-G8
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.1Ohm
- DS Breakdown Voltage-Min :
- 25V
- Number of Elements :
- 2
- Qualification Status :
- Not Qualified
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power - Max :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Datasheets
- IRF7105PBF

IRF7105PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
IRF7105PBF Description
The IRF7105PBF is a Dual P-Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7105PBF Features
-
Advanced Process Technology
-
Ultra-Low On-Resistance
-
Dual N and P Channel Mosfet
-
Surface Mount
-
Available in Tape & Reel
-
Dynamic dv/dt Rating
-
Fast Switching
-
Lead-Free
IRF7105PBF Applications
-
High-speed power switching
-
Hard switched and high-frequency circuits
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