IRF7105PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Power - Max :

2W

DS Breakdown Voltage-Min :

25V

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 10V

FET Type :

N and P-Channel

JESD-609 Code :

e3

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Published :

2003

JEDEC-95 Code :

MS-012AA

Power Dissipation-Max (Abs) :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

14A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Transistor Element Material :

SILICON

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

Number of Elements :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain Current-Max (Abs) (ID) :

3.5A

Number of Terminations :

8

Qualification Status :

Not Qualified

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Base Part Number :

IRF7105PBF

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

25V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.1Ohm