IRF7105PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

3.5A

Power - Max :

2W

Published :

2003

Number of Elements :

2

DS Breakdown Voltage-Min :

25V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

FET Feature :

Standard

Power Dissipation-Max (Abs) :

2W

Pulsed Drain Current-Max (IDM) :

14A

FET Type :

N and P-Channel

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

JEDEC-95 Code :

MS-012AA

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.1Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

IRF7105PBF

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tube

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Terminations :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V