IRF7307QTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

5.2A

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET Feature :

Logic Level Gate

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.05Ohm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

DS Breakdown Voltage-Min :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Radiation Hardening :

No

JEDEC-95 Code :

MS-012AA

Series :

HEXFET®

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.6A, 4.5V

Published :

2010

Vgs(th) (Max) @ Id :

700mV @ 250μA

Height :

1.4986mm

Length :

4.9784mm

Number of Pins :

8

Max Power Dissipation :

2W

Packaging :

Cut Tape (CT)

Power Dissipation :

2W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.2A 4.3A

Pulsed Drain Current-Max (IDM) :

21A

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Base Part Number :

IRF7307QPBF

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)