IRF6702M2DTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Terminal Form :

NO LEAD

Operating Temperature :

-55°C~175°C TJ

Power - Max :

2.7W

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Number of Terminations :

4

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Avalanche Energy Rating (Eas) :

71 mJ

Package / Case :

DirectFET™ Isometric MA

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

130A

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Terminal Position :

BOTTOM

JESD-30 Code :

R-XBCC-N4

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 15V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Published :

2010

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0066Ohm

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

15A

Surface Mount :

yes

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

15A

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 15A, 10V