IRF610PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

1.5Ohm

Package / Case :

TO-220-3

Voltage - Rated DC :

200V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

FET Type :

N-Channel

Turn-Off Delay Time :

14 ns

Rds On Max :

1.5 Ω

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2A, 10V

Turn On Delay Time :

8.2 ns

Radiation Hardening :

No

Number of Pins :

3

Number of Elements :

1

Resistance :

1.5Ohm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Fall Time (Typ) :

8.9 ns

Recovery Time :

310 ns

Height :

9.01mm

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Continuous Drain Current (ID) :

3.3A

Supplier Device Package :

TO-220AB

Nominal Vgs :

4 V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

140pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.7mm

Published :

1997

Drain to Source Breakdown Voltage :

200V

REACH SVHC :

Unknown

Power Dissipation :

36W

Length :

10.41mm

Drain to Source Voltage (Vdss) :

200V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

36W Tc

Factory Lead Time :

8 Weeks

Rise Time :

17ns

Current Rating :

3.3A

Packaging :

Tube

Voltage :

200V

Number of Channels :

1

Weight :

6.000006g

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Threshold Voltage :

4V

Mounting Type :

Through Hole