IRF610

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

REACH SVHC :

Unknown

FET Type :

N-Channel

Current Rating :

3.3A

Power Dissipation :

3W

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8.2 ns

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Element Configuration :

Single

Drain to Source Breakdown Voltage :

200V

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

14 ns

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Published :

2011

Number of Channels :

1

Drain to Source Voltage (Vdss) :

200V

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

6.000006g

Supplier Device Package :

TO-220AB

Voltage - Rated DC :

200V

Power Dissipation-Max :

36W Tc

Drain to Source Resistance :

1.5Ohm

Length :

10.41mm

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Lead Free :

Contains Lead

Height :

9.01mm

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2A, 10V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

3.3A

Rise Time :

17ns

Width :

4.7mm

Rds On Max :

1.5 Ω

RoHS Status :

Non-RoHS Compliant

Number of Pins :

3

Number of Elements :

1

Nominal Vgs :

4 V

Input Capacitance :

140pF