IRF6100

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

4-FlipFet™

Rds On (Max) @ Id, Vgs :

65mOhm @ 5.1A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Contains Lead

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Mount :

Surface Mount

Number of Pins :

4

Power Dissipation-Max :

2.2W Ta

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Continuous Drain Current (ID) :

5.1A

FET Type :

P-Channel

Voltage - Rated DC :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Rise Time :

12ns

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±12V

Current Rating :

-5.1A

Packaging :

Cut Tape (CT)

Package / Case :

4-FlipFet™

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Rds On Max :

65 mΩ

Input Capacitance :

1.23nF

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V