IRF610B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

10 A

Vgs(th) (Max) @ Id :

4V @ 250µA

Polarity/Channel Type :

N-Channel

Product Status :

Active

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

No

Gate Charge (Qg) (Max) @ Vgs :

9.3 nC @ 10 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

200 V

Terminal Finish :

TIN LEAD

JEDEC-95 Code :

TO-220

FET Feature :

-

Qualification Status :

COMMERCIAL

JESD-609 Code :

e0

Input Capacitance (Ciss) (Max) @ Vds :

225 pF @ 25 V

Series :

-

Package / Case :

TO-220-3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

3.3A (Tc)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Application :

SWITCHING

Manufacturer :

Rochester Electronics LLC

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Package :

Bulk

Power Dissipation (Max) :

38W (Tc)

Drain-source On Resistance-Max :

1.5 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Terminal Position :

Single

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.65A, 10V

Avalanche Energy Rating (Eas) :

40 mJ

DS Breakdown Voltage-Min :

200 V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Supplier Device Package :

TO-220

Reach Compliance Code :

Unknown