IRF610LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta 36W Tc

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Turn On Delay Time :

8.2 ns

Mount :

Through Hole

Weight :

6.000006g

Mounting Type :

Through Hole

Fall Time (Typ) :

8.9 ns

Number of Channels :

1

Width :

4.7mm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rise Time :

17ns

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Continuous Drain Current (ID) :

3.3A

Number of Terminations :

3

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2A, 10V

Factory Lead Time :

11 Weeks

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Length :

10.41mm

Pbfree Code :

yes

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Published :

2016

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Turn-Off Delay Time :

14 ns

Number of Elements :

1

Height :

9.01mm

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V