IRF610S

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Mfr.Part #
IRF610S
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 3.3A D2PAK
Stock
4,238
In Stock :
4,238

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Drain to Source Voltage (Vdss) :
200V
Vgs(th) (Max) @ Id :
4V @ 250µA
Input Capacitance :
140pF
Mounting Type :
Surface Mount
Number of Channels :
1
Drain to Source Breakdown Voltage :
200V
Rds On Max :
1.5 Ω
Fall Time (Typ) :
8.9 ns
Height :
4.83mm
Turn-Off Delay Time :
14 ns
Width :
9.65mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Resistance :
1.5Ohm
Rise Time :
17ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
Non-RoHS Compliant
Continuous Drain Current (ID) :
3.3A
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
1.5Ohm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
Max Operating Temperature :
150°C
FET Type :
N-Channel
Min Operating Temperature :
-55°C
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight :
1.437803g
Current - Continuous Drain (Id) @ 25°C :
3.3A Tc
Gate Charge (Qg) (Max) @ Vgs :
8.2nC @ 10V
Element Configuration :
Single
Vgs (Max) :
±20V
Turn On Delay Time :
8.2 ns
Published :
2016
Power Dissipation-Max :
3W Ta 36W Tc
Length :
10.67mm
Mount :
Surface Mount
Number of Pins :
3
Supplier Device Package :
D2PAK
Operating Temperature :
-55°C~150°C TJ
Datasheets
IRF610S
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF610S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRF610S pinout, IRF610S datasheet PDF, IRF610S amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF610S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF610S


N-Channel Tube 1.5Ohm @ 2A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF610S Overview


The maximum input capacitance of this device is 140pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.3A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 14 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF610S Features


a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRF610S Applications


There are a lot of Vishay Siliconix
IRF610S applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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