IRF610S

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Width :

9.65mm

Mounting Type :

Surface Mount

Rise Time :

17ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On Max :

1.5 Ω

Weight :

1.437803g

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2A, 10V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.83mm

Turn-Off Delay Time :

14 ns

Input Capacitance :

140pF

Power Dissipation-Max :

3W Ta 36W Tc

Drain to Source Resistance :

1.5Ohm

RoHS Status :

Non-RoHS Compliant

Fall Time (Typ) :

8.9 ns

Continuous Drain Current (ID) :

3.3A

Length :

10.67mm

Number of Pins :

3

Number of Channels :

1

Published :

2016

Packaging :

Tube

Turn On Delay Time :

8.2 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Supplier Device Package :

D2PAK

FET Type :

N-Channel

Max Operating Temperature :

150°C