IRF610S
- Mfr.Part #
- IRF610S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.3A D2PAK
- Stock
- 4,238
- In Stock :
- 4,238
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 140pF
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 200V
- Rds On Max :
- 1.5 Ω
- Fall Time (Typ) :
- 8.9 ns
- Height :
- 4.83mm
- Turn-Off Delay Time :
- 14 ns
- Width :
- 9.65mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 1.5Ohm
- Rise Time :
- 17ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Continuous Drain Current (ID) :
- 3.3A
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Weight :
- 1.437803g
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 8.2 ns
- Published :
- 2016
- Power Dissipation-Max :
- 3W Ta 36W Tc
- Length :
- 10.67mm
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Supplier Device Package :
- D2PAK
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRF610S
N-Channel Tube 1.5Ohm @ 2A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF610S Overview
The maximum input capacitance of this device is 140pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.3A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 14 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF610S Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF610S Applications
There are a lot of Vishay Siliconix
IRF610S applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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