IRF60B217

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

9m Ω @ 36A, 10V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

83W Tc

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Elements :

1

Package / Case :

TO-220-3

Number of Terminations :

3

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.009Ohm

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

3.7V @ 50μA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2230pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

225A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Terminal Position :

Single

Series :

StrongIRFET™

Packaging :

Tube

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

124 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2013