IRF6100PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

65 mΩ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Published :

2005

FET Type :

P-Channel

Input Capacitance :

1.23nF

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Series :

HEXFET®

Package / Case :

4-FlipFet™

Rds On (Max) @ Id, Vgs :

65mOhm @ 5.1A, 4.5V

Number of Elements :

1

Lead Free :

Lead Free

Power Dissipation :

2.2W

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Pins :

4

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Supplier Device Package :

4-FlipFet™

Continuous Drain Current (ID) :

5.1A

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

-20V

Power Dissipation-Max :

2.2W Ta

Nominal Vgs :

-1.2 V

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V