IRF610B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

10 A

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Terminal Finish :

TIN LEAD

Polarity/Channel Type :

N-Channel

Product Status :

Active

Manufacturer :

Rochester Electronics LLC

Gate Charge (Qg) (Max) @ Vgs :

9.3 nC @ 10 V

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.65A, 10V

Current - Continuous Drain (Id) @ 25°C :

3.3A (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Number of Elements :

1

Number of Terminals :

3

Pin Count :

3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

No

Surface Mount :

No

Drain to Source Voltage (Vdss) :

200 V

Terminal Position :

Single

Transistor Application :

SWITCHING

FET Feature :

-

Series :

-

Package :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

225 pF @ 25 V

Drain-source On Resistance-Max :

1.5 Ω

JESD-609 Code :

e0

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-220

Power Dissipation (Max) :

38W (Tc)

DS Breakdown Voltage-Min :

200 V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

40 mJ

Package / Case :

TO-220-3

Operating Temperature :

-55°C ~ 150°C (TJ)

JEDEC-95 Code :

TO-220

Qualification Status :

COMMERCIAL