IRF610L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2A, 10V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Power Dissipation-Max :

3W Ta 36W Tc

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Packaging :

Tube

Number of Terminations :

3

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Published :

2016

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.3A