IRF610

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Voltage - Rated DC :

200V

Vgs (Max) :

±20V

Nominal Vgs :

4 V

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3

Drain to Source Resistance :

1.5Ohm

Lead Free :

Contains Lead

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Mount :

Through Hole

Continuous Drain Current (ID) :

3.3A

Current Rating :

3.3A

Input Capacitance :

140pF

Length :

10.41mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Height :

9.01mm

Drain to Source Voltage (Vdss) :

200V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Rise Time :

17ns

Element Configuration :

Single

REACH SVHC :

Unknown

Packaging :

Tube

Power Dissipation-Max :

36W Tc

Published :

2011

Rds On Max :

1.5 Ω

Turn-Off Delay Time :

14 ns

Fall Time (Typ) :

8.9 ns

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2A, 10V

Turn On Delay Time :

8.2 ns

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Radiation Hardening :

No

Power Dissipation :

3W

Number of Elements :

1

Width :

4.7mm