IRF60R217

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

124 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 25V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 35A, 10V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0099Ohm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.7V @ 50μA

Terminal Position :

Single

Vgs (Max) :

±20V

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

83W Tc

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Series :

StrongIRFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

217A

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Published :

2013

Continuous Drain Current (ID) :

58A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

58A Tc

DS Breakdown Voltage-Min :

60V