IRF610

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

140pF

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

200V

Nominal Vgs :

4 V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Drain to Source Resistance :

1.5Ohm

Package / Case :

TO-220-3

Width :

4.7mm

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Current Rating :

3.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2A, 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

36W Tc

Fall Time (Typ) :

8.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

200V

Published :

2011

Element Configuration :

Single

Height :

9.01mm

Min Operating Temperature :

-55°C

Rds On Max :

1.5 Ω

Number of Elements :

1

Length :

10.41mm

Number of Channels :

1

Continuous Drain Current (ID) :

3.3A

REACH SVHC :

Unknown

Turn-Off Delay Time :

14 ns

Rise Time :

17ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

200V

Turn On Delay Time :

8.2 ns

Weight :

6.000006g

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Power Dissipation :

3W