IRF60B217

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

124 mJ

Continuous Drain Current (ID) :

60A

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2230pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Rds On (Max) @ Id, Vgs :

9m Ω @ 36A, 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

Not Applicable

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Lead Free :

Lead Free

ECCN Code :

EAR99

Published :

2013

Pulsed Drain Current-Max (IDM) :

225A

Mounting Type :

Through Hole

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

N-Channel

Series :

StrongIRFET™

Drain-source On Resistance-Max :

0.009Ohm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3.7V @ 50μA

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

60A Tc

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole