BFG590/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) :

15V

HTS Code :

8541.21.00.75

Case Connection :

COLLECTOR

Additional Feature :

High Reliability

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

L B

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 70mA 8V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

175°C TJ

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Position :

Dual

Pin Count :

4

Frequency - Transition :

5GHz

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

0.65W

Polarity/Channel Type :

NPN

Surface Mount :

yes

Current - Collector (Ic) (Max) :

200mA

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G4

Published :

1998

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transition Frequency :

5000MHz

Power - Max :

400mW

Package / Case :

TO-253-4, TO-253AA

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Number of Terminations :

4

ECCN Code :

EAR99