BFG541,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation Ambient-Max :

0.65W

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Number of Elements :

1

Current - Collector (Ic) (Max) :

120mA

Terminal Finish :

Tin (Sn)

Transition Frequency :

9000MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Frequency - Transition :

9GHz

Published :

1997

Transistor Application :

SWITCHING

Number of Terminations :

4

Qualification Status :

Not Qualified

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.65W

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

Polarity/Channel Type :

NPN

Base Part Number :

BFG541

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3

Highest Frequency Band :

L B

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Additional Feature :

High Reliability

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 40mA 8V

Operating Temperature :

175°C TJ

ECCN Code :

EAR99

Terminal Form :

Gull wing

Power - Max :

650mW

RoHS Status :

ROHS3 Compliant