2DB1188R-13

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Mfr.Part #
2DB1188R-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 32V 2A SOT89-3
Stock
42,228
In Stock :
42,228

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
hFE Min :
180
Gain Bandwidth Product :
120MHz
Pbfree Code :
yes
Max Collector Current :
2A
Radiation Hardening :
No
Base Part Number :
2DB1188
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.5mm
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
32V
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Number of Pins :
4
Collector Emitter Voltage (VCEO) :
32V
Collector Emitter Saturation Voltage :
800mV
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Max Breakdown Voltage :
32V
Mount :
Surface Mount
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1W
Transistor Type :
PNP
Lead Free :
Lead Free
Published :
2013
Contact Plating :
Tin
Factory Lead Time :
15 Weeks
Packaging :
Tape and Reel (TR)
Weight :
51.993025mg
Terminal Form :
Flat
Package / Case :
TO-243AA
Collector Base Voltage (VCBO) :
40V
JESD-30 Code :
R-PSSO-F3
Emitter Base Voltage (VEBO) :
6V
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 3V
Number of Elements :
1
Length :
4.5mm
Pin Count :
4
Max Power Dissipation :
1W
Current - Collector Cutoff (Max) :
100nA ICBO
Width :
2.48mm
RoHS Status :
ROHS3 Compliant
Transition Frequency :
120MHz
Frequency :
120MHz
Datasheets
2DB1188R-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1188R-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2DB1188, Mounting Type:Surface Mount, Number of Pins:4, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-243AA, 2DB1188R-13 pinout, 2DB1188R-13 datasheet PDF, 2DB1188R-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1188R-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1188R-13


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2DB1188R-13 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 3V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.There is a breakdown input voltage of 32V volts that it can take.Collector current can be as low as 2A volts at its maximum.

2DB1188R-13 Features


the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz


2DB1188R-13 Applications


There are a lot of Diodes Incorporated
2DB1188R-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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