2DB1132R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

JESD-30 Code :

R-PSSO-F3

Frequency :

190MHz

Mount :

Surface Mount

Number of Pins :

4

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-125mV

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 100mA 3V

Transition Frequency :

190MHz

Collector Emitter Breakdown Voltage :

32V

Published :

2011

Max Collector Current :

1A

Number of Elements :

1

Max Power Dissipation :

1W

Width :

2.48mm

Pin Count :

3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

190MHz

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation :

1W

REACH SVHC :

No SVHC

Package / Case :

TO-243AA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

500nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.5mm

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

32V

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

15 Weeks

Length :

4.5mm

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

32V

Element Configuration :

Single

Transistor Application :

SWITCHING

Terminal Form :

Flat

Weight :

51.993025mg

Base Part Number :

2DB1132