2DB1132R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Max Power Dissipation :

1W

JESD-30 Code :

R-PSSO-F3

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

-125mV

Max Collector Current :

1A

Transistor Element Material :

SILICON

Transition Frequency :

190MHz

Max Breakdown Voltage :

32V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gain Bandwidth Product :

190MHz

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

32V

Number of Pins :

4

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Terminations :

3

Weight :

51.993025mg

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Pbfree Code :

yes

Transistor Type :

PNP

Package / Case :

TO-243AA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Elements :

1

Radiation Hardening :

No

Frequency :

190MHz

Pin Count :

3

Collector Emitter Voltage (VCEO) :

32V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

2DB1132

Collector Base Voltage (VCBO) :

40V

Current - Collector Cutoff (Max) :

500nA ICBO

Width :

2.48mm

Factory Lead Time :

15 Weeks

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 100mA 3V

Height :

1.5mm

Mount :

Surface Mount

Power Dissipation :

1W

RoHS Status :

ROHS3 Compliant

Length :

4.5mm

Polarity/Channel Type :

PNP

Terminal Form :

Flat

Published :

2011