2DB1132R-13

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Mfr.Part #
2DB1132R-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 32V 1A SOT89-3
Stock
10,729
In Stock :
10,729

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
4.5mm
Base Part Number :
2DB1132
Mount :
Surface Mount
Radiation Hardening :
No
Pbfree Code :
yes
Number of Pins :
4
Emitter Base Voltage (VEBO) :
5V
Pin Count :
3
Case Connection :
COLLECTOR
Max Power Dissipation :
1W
Width :
2.48mm
Terminal Finish :
Matte Tin (Sn)
Collector Emitter Voltage (VCEO) :
32V
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
32V
Height :
1.5mm
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Transition Frequency :
190MHz
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
190MHz
Number of Terminations :
3
Collector Emitter Saturation Voltage :
-125mV
Polarity/Channel Type :
PNP
Terminal Form :
Flat
Max Breakdown Voltage :
32V
Element Configuration :
Single
Max Collector Current :
1A
Package / Case :
TO-243AA
Published :
2011
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 100mA 3V
JESD-30 Code :
R-PSSO-F3
REACH SVHC :
No SVHC
Number of Elements :
1
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
190MHz
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
500nA ICBO
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
15 Weeks
Transistor Type :
PNP
Collector Base Voltage (VCBO) :
40V
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
ECCN Code :
EAR99
JESD-609 Code :
e3
Power Dissipation :
1W
Operating Temperature :
-55°C~150°C TJ
Weight :
51.993025mg
Datasheets
2DB1132R-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1132R-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2DB1132, Number of Pins:4, Number of Terminations:3, Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, 2DB1132R-13 pinout, 2DB1132R-13 datasheet PDF, 2DB1132R-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1132R-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1132R-13


PNP -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2DB1132R-13 Overview


This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -125mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 190MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 1A volts.

2DB1132R-13 Features


the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz


2DB1132R-13 Applications


There are a lot of Diodes Incorporated
2DB1132R-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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