2DB1132R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

32V

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

1W

Factory Lead Time :

15 Weeks

Width :

2.48mm

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 100mA 3V

Number of Pins :

4

Package / Case :

TO-243AA

Case Connection :

COLLECTOR

Number of Terminations :

3

Gain Bandwidth Product :

190MHz

Pin Count :

3

Power Dissipation :

1W

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

40V

Collector Emitter Saturation Voltage :

-125mV

Weight :

51.993025mg

Frequency :

190MHz

JESD-30 Code :

R-PSSO-F3

Height :

1.5mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Base Part Number :

2DB1132

Element Configuration :

Single

Max Collector Current :

1A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

32V

JESD-609 Code :

e3

Published :

2011

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Length :

4.5mm

Transition Frequency :

190MHz

Current - Collector Cutoff (Max) :

500nA ICBO

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

32V

Pbfree Code :

yes

Transistor Type :

PNP

Radiation Hardening :

No