2DB1132R-13
- Mfr.Part #
- 2DB1132R-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A SOT89-3
- Stock
- 10,729
- In Stock :
- 10,729
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.5mm
- Gain Bandwidth Product :
- 190MHz
- Max Breakdown Voltage :
- 32V
- Number of Pins :
- 4
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Published :
- 2011
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 32V
- Base Part Number :
- 2DB1132
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Length :
- 4.5mm
- Width :
- 2.48mm
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PSSO-F3
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 190MHz
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 51.993025mg
- Frequency :
- 190MHz
- Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -125mV
- Collector Emitter Breakdown Voltage :
- 32V
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Datasheets
- 2DB1132R-13

PNP -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1132R-13 Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -125mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 190MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 1A volts.
2DB1132R-13 Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz
2DB1132R-13 Applications
There are a lot of Diodes Incorporated
2DB1132R-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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