2DB1132Q-13

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Mfr.Part #
2DB1132Q-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 32V 1A SOT89-3
Stock
12,604
In Stock :
12,604

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Frequency :
190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA 3V
REACH SVHC :
No SVHC
Factory Lead Time :
19 Weeks
Number of Pins :
4
Polarity :
PNP
Max Power Dissipation :
1W
Voltage - Collector Emitter Breakdown (Max) :
32V
Width :
2.48mm
Published :
2011
Weight :
51.993025mg
Supplier Device Package :
SOT-89-3
Max Operating Temperature :
150°C
Max Breakdown Voltage :
32V
Current - Collector (Ic) (Max) :
1A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Frequency - Transition :
190MHz
Transistor Type :
PNP
Collector Base Voltage (VCBO) :
40V
Power Dissipation :
1W
Mount :
Surface Mount
Collector Emitter Breakdown Voltage :
32V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
1A
Radiation Hardening :
No
Package / Case :
TO-243AA
Height :
1.5mm
Collector Emitter Voltage (VCEO) :
32V
Min Operating Temperature :
-55°C
Power - Max :
1W
Base Part Number :
2DB1132
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
500nA ICBO
Number of Elements :
1
Collector Emitter Saturation Voltage :
-125mV
Emitter Base Voltage (VEBO) :
-5V
Gain Bandwidth Product :
190MHz
Length :
4.5mm
Mounting Type :
Surface Mount
Element Configuration :
Single
Datasheets
2DB1132Q-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1132Q-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-243AA, Base Part Number:2DB1132, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, 2DB1132Q-13 pinout, 2DB1132Q-13 datasheet PDF, 2DB1132Q-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1132Q-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1132Q-13


PNP -55°C~150°C TJ 500nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount

2DB1132Q-13 Overview


This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -125mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.As a result, it can handle voltages as low as 32V volts.Single BJT transistor comes in a supplier device package of SOT-89-3.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.The maximum collector current is 1A volts.

2DB1132Q-13 Features


the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the supplier device package of SOT-89-3


2DB1132Q-13 Applications


There are a lot of Diodes Incorporated
2DB1132Q-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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