2DB1132Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

500nA ICBO

Power - Max :

1W

Length :

4.5mm

Polarity :

PNP

Weight :

51.993025mg

Voltage - Collector Emitter Breakdown (Max) :

32V

Number of Elements :

1

Height :

1.5mm

Power Dissipation :

1W

Element Configuration :

Single

Published :

2011

Frequency - Transition :

190MHz

Collector Emitter Breakdown Voltage :

32V

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

-125mV

Base Part Number :

2DB1132

Number of Pins :

4

Frequency :

190MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Current - Collector (Ic) (Max) :

1A

Min Operating Temperature :

-55°C

Supplier Device Package :

SOT-89-3

Factory Lead Time :

19 Weeks

Max Operating Temperature :

150°C

Collector Base Voltage (VCBO) :

40V

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Voltage (VCEO) :

32V

Width :

2.48mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1W

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

Mounting Type :

Surface Mount

Max Collector Current :

1A

Transistor Type :

PNP

Gain Bandwidth Product :

190MHz

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

32V

Package / Case :

TO-243AA

RoHS Status :

ROHS3 Compliant