2DB1182Q-13
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- Mfr.Part #
- 2DB1182Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A TO252-3
- Stock
- 34,748
- In Stock ：
- 34,748
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Gain Bandwidth Product :
- 110MHz
- Transition Frequency :
- 110MHz
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Published :
- 2011
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 32V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 13 Weeks
- Base Part Number :
- 2DB1182
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 10W
- Power Dissipation :
- 10W
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 32V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -800mV
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 32V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- REACH SVHC :
- No SVHC
- Weight :
- 3.949996g
- Frequency :
- 110MHz
- Datasheets
- 2DB1182Q-13
PNP -55°C~150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2DB1182Q-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 2A volts.
2DB1182Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
2DB1182Q-13 Applications
There are a lot of Diodes Incorporated
2DB1182Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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