2DB1132P-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Package / Case :

TO-243AA

ECCN Code :

EAR99

Max Breakdown Voltage :

32V

Transition Frequency :

190MHz

Collector Base Voltage (VCBO) :

40V

Factory Lead Time :

7 Weeks

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1W

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

32V

Base Part Number :

2DB1132

Frequency :

190MHz

JESD-30 Code :

R-PSSO-F3

Collector Emitter Voltage (VCEO) :

32V

Case Connection :

COLLECTOR

Length :

4.5mm

Current - Collector Cutoff (Max) :

500nA ICBO

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 100mA 3V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Elements :

1

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260

Published :

2011

Weight :

51.993025mg

Number of Pins :

4

Max Collector Current :

1A

Gain Bandwidth Product :

190MHz

hFE Min :

82

Width :

2.48mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Height :

1.5mm