2DB1386R-13

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Mfr.Part #
2DB1386R-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 20V 5A SOT89-3
Stock
62,621
In Stock :
62,621

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
5A
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Dual
Current - Collector Cutoff (Max) :
500nA ICBO
Gain Bandwidth Product :
100MHz
Power Dissipation :
1W
Length :
4.5mm
Number of Terminations :
4
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 2V
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
4
Mounting Type :
Surface Mount
Element Configuration :
Single
Height :
1.5mm
Weight :
130.492855mg
REACH SVHC :
No SVHC
Emitter Base Voltage (VEBO) :
-6V
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
8 Weeks
Transistor Type :
PNP
Pin Count :
4
Max Breakdown Voltage :
20V
Mount :
Surface Mount
Collector Base Voltage (VCBO) :
30V
JESD-609 Code :
e3
Transition Frequency :
100MHz
Terminal Form :
Flat
Width :
2.48mm
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
yes
Series :
Automotive, AEC-Q101
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
-250mV
Package / Case :
TO-243AA
Transistor Element Material :
SILICON
Frequency :
100MHz
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
20V
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
1V @ 100mA, 4A
Collector Emitter Voltage (VCEO) :
20V
ECCN Code :
EAR99
Max Power Dissipation :
1W
Number of Elements :
1
Transistor Application :
SWITCHING
Polarity/Channel Type :
PNP
Published :
2011
Datasheets
2DB1386R-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1386R-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Pins:4, Mounting Type:Surface Mount, Package / Case:TO-243AA, 2DB1386R-13 pinout, 2DB1386R-13 datasheet PDF, 2DB1386R-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1386R-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1386R-13


PNP -55°C~150°C TJ 500nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2DB1386R-13 Overview


This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 1V @ 100mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 20V volts can be used.A maximum collector current of 5A volts is possible.

2DB1386R-13 Features


the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz


2DB1386R-13 Applications


There are a lot of Diodes Incorporated
2DB1386R-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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