2DB1386R-13
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- Mfr.Part #
- 2DB1386R-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A SOT89-3
- Stock
- 62,621
- In Stock ：
- 62,621
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 30V
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -6V
- Height :
- 1.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Width :
- 2.48mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 5A
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 20V
- Published :
- 2011
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Weight :
- 130.492855mg
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Transistor Type :
- PNP
- Pin Count :
- 4
- Power Dissipation :
- 1W
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -250mV
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.5mm
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 1W
- Datasheets
- 2DB1386R-13
PNP -55°C~150°C TJ 500nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1386R-13 Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 1V @ 100mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 20V volts can be used.A maximum collector current of 5A volts is possible.
2DB1386R-13 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
2DB1386R-13 Applications
There are a lot of Diodes Incorporated
2DB1386R-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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