2DB1386R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

5A

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

500nA ICBO

Gain Bandwidth Product :

100MHz

Power Dissipation :

1W

Length :

4.5mm

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 500mA 2V

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

4

Mounting Type :

Surface Mount

Element Configuration :

Single

Height :

1.5mm

Weight :

130.492855mg

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

-6V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

8 Weeks

Transistor Type :

PNP

Pin Count :

4

Max Breakdown Voltage :

20V

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

30V

JESD-609 Code :

e3

Transition Frequency :

100MHz

Terminal Form :

Flat

Width :

2.48mm

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

-250mV

Package / Case :

TO-243AA

Transistor Element Material :

SILICON

Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

20V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 4A

Collector Emitter Voltage (VCEO) :

20V

ECCN Code :

EAR99

Max Power Dissipation :

1W

Number of Elements :

1

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Published :

2011