2DB1184Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Max Collector Current :

3A

Frequency :

110MHz

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 2A

Transistor Type :

PNP

Weight :

260.39037mg

Length :

6.8mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Number of Elements :

1

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Gain Bandwidth Product :

110MHz

Pin Count :

4

Height :

2.4mm

Power Dissipation :

15W

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

50V

Width :

6.2mm

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Transition Frequency :

110MHz

Factory Lead Time :

13 Weeks

Element Configuration :

Single

Published :

2011

JESD-609 Code :

e3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA ICBO

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

PNP

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Base Voltage (VCBO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 3V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Pins :

3

Max Power Dissipation :

15W

Time@Peak Reflow Temperature-Max (s) :

40