2DB1119S-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Collector Emitter Breakdown Voltage :

25V

Polarity/Channel Type :

PNP

Width :

2.5mm

REACH SVHC :

No SVHC

Weight :

51.993025mg

Frequency :

200MHz

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-F3

Mount :

Surface Mount

Height :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Power Dissipation :

1W

Number of Terminations :

3

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 50mA 2V

Radiation Hardening :

No

JESD-609 Code :

e3

Transition Frequency :

200MHz

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Pins :

4

Published :

2007

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

25V

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

25V

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Length :

4.5mm

Transistor Application :

SWITCHING

Max Collector Current :

1A

Package / Case :

TO-243AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1W

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

200MHz

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

PNP