2DB1188Q-13
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- Mfr.Part #
- 2DB1188Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A SOT89-3
- Stock
- 1,101
- In Stock ：
- 1,101
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 120MHz
- Width :
- 2.48mm
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 1W
- JESD-30 Code :
- R-PSSO-F3
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 32V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Height :
- 1.5mm
- Package / Case :
- TO-243AA
- Max Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 19 Weeks
- Transistor Element Material :
- SILICON
- Length :
- 4.5mm
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 51.993025mg
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 120MHz
- Collector Emitter Saturation Voltage :
- -800mV
- Base Part Number :
- 2DB1188
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Published :
- 2013
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Element Configuration :
- Single
- Number of Pins :
- 4
- Number of Terminations :
- 3
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2DB1188Q-13
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1188Q-13 Overview
In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2DB1188Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 120MHz
2DB1188Q-13 Applications
There are a lot of Diodes Incorporated
2DB1188Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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