2DB1386Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Surface Mount

Weight :

51.993025mg

Width :

2.48mm

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

500nA ICBO

Max Power Dissipation :

1W

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 4A

Radiation Hardening :

No

Terminal Form :

Flat

Power Dissipation :

1W

Factory Lead Time :

13 Weeks

Number of Pins :

4

Transistor Application :

SWITCHING

Element Configuration :

Single

Transistor Type :

PNP

Case Connection :

COLLECTOR

Gain Bandwidth Product :

100MHz

Package / Case :

TO-243AA

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

6V

hFE Min :

120

Terminal Position :

Dual

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

20V

Base Part Number :

2DB1386

Transition Frequency :

100MHz

Collector Base Voltage (VCBO) :

30V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Height :

1.5mm

Collector Emitter Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

ECCN Code :

EAR99

Length :

4.5mm

Max Breakdown Voltage :

20V

Frequency :

100MHz

Pin Count :

4

Max Collector Current :

5A

Transistor Element Material :

SILICON