2DB1188P-13

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Mfr.Part #
2DB1188P-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 32V 2A SOT89-3
Stock
5,133
In Stock :
5,133

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
51.993025mg
Case Connection :
COLLECTOR
Mounting Type :
Surface Mount
Number of Terminations :
3
ECCN Code :
EAR99
Max Power Dissipation :
1W
Power Dissipation :
1W
Collector Emitter Voltage (VCEO) :
32V
Width :
2.48mm
Pin Count :
4
JESD-30 Code :
R-PSSO-F3
Max Breakdown Voltage :
32V
Published :
2013
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
4
Collector Base Voltage (VCBO) :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Length :
4.5mm
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
32V
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
7 Weeks
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Package / Case :
TO-243AA
Terminal Finish :
Matte Tin (Sn)
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
82 @ 500mA 3V
Polarity/Channel Type :
PNP
Packaging :
Tape and Reel (TR)
Max Collector Current :
2A
Current - Collector Cutoff (Max) :
100nA ICBO
Radiation Hardening :
No
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
hFE Min :
82
Transition Frequency :
120MHz
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Peak Reflow Temperature (Cel) :
260
Base Part Number :
2DB1188
Mount :
Surface Mount
Terminal Form :
Flat
Height :
1.5mm
Frequency :
120MHz
Gain Bandwidth Product :
120MHz
Number of Elements :
1
Datasheets
2DB1188P-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1188P-13 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:TO-243AA, Base Part Number:2DB1188, 2DB1188P-13 pinout, 2DB1188P-13 datasheet PDF, 2DB1188P-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1188P-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1188P-13


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2DB1188P-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 500mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 2A volts.

2DB1188P-13 Features


the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 120MHz


2DB1188P-13 Applications


There are a lot of Diodes Incorporated
2DB1188P-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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