2DB1188P-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Weight :

51.993025mg

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Width :

2.48mm

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Collector Emitter Voltage (VCEO) :

32V

Pbfree Code :

yes

Published :

2013

Number of Pins :

4

Gain Bandwidth Product :

120MHz

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

2A

Transistor Type :

PNP

Base Part Number :

2DB1188

RoHS Status :

ROHS3 Compliant

Frequency :

120MHz

Height :

1.5mm

Max Power Dissipation :

1W

Transition Frequency :

120MHz

Mount :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-F3

hFE Min :

82

Max Breakdown Voltage :

32V

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

40V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Factory Lead Time :

7 Weeks

REACH SVHC :

No SVHC

Length :

4.5mm

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

32V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 500mA 3V

Polarity/Channel Type :

PNP