2DB1188P-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

32V

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

120MHz

Terminal Form :

Flat

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Frequency :

120MHz

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

1W

Max Breakdown Voltage :

32V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-243AA

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 500mA 3V

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Height :

1.5mm

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

4

JESD-30 Code :

R-PSSO-F3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Weight :

51.993025mg

Pin Count :

4

Transition Frequency :

120MHz

Max Collector Current :

2A

hFE Min :

82

Width :

2.48mm

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Power Dissipation :

1W

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Number of Elements :

1

Length :

4.5mm

Base Part Number :

2DB1188

Factory Lead Time :

7 Weeks

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

32V

Collector Base Voltage (VCBO) :

40V

Published :

2013