STP2N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Number of Terminations :

3

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

85 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

3.6Ohm

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.1A, 10V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Rise Time :

4.4ns

Fall Time (Typ) :

22 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

620V

Mounting Type :

Through Hole

Turn On Delay Time :

8 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Base Part Number :

STP2N

Number of Pins :

3

Mount :

Through Hole

ECCN Code :

EAR99

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation :

45W

Packaging :

Tube

Turn-Off Delay Time :

21 ns

Pin Count :

3

Series :

SuperMESH3™

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

2.2A

Width :

4.6mm

Power Dissipation-Max :

45W Tc

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 50V

Threshold Voltage :

3.75V

Pulsed Drain Current-Max (IDM) :

8.8A

Package / Case :

TO-220-3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

REACH SVHC :

No SVHC

Height :

15.75mm

Operating Temperature :

150°C TJ

Element Configuration :

Single

Number of Elements :

1

Radiation Hardening :

No