STB8NM60T4

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Mfr.Part #
STB8NM60T4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 8A D2PAK
Stock
29,579
In Stock :
29,579

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Fall Time (Typ) :
10 ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Breakdown Voltage :
600V
Rise Time :
10ns
Element Configuration :
Single
JESD-30 Code :
R-PSSO-G2
Packaging :
Tape and Reel (TR)
Base Part Number :
STB8N
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
2
Voltage - Rated DC :
650V
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
1 Ω @ 2.5A, 10V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
100W Tc
Power Dissipation :
100W
Continuous Drain Current (ID) :
8A
Resistance :
1Ohm
Time@Peak Reflow Temperature-Max (s) :
30
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
Series :
MDmesh™
Vgs(th) (Max) @ Id :
5V @ 250μA
Avalanche Energy Rating (Eas) :
200 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Threshold Voltage :
4V
Current Rating :
5A
Peak Reflow Temperature (Cel) :
245
Turn On Delay Time :
14 ns
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Factory Lead Time :
17 Weeks
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Turn-Off Delay Time :
23 ns
FET Type :
N-Channel
Terminal Form :
Gull wing
Pin Count :
3
Drain Current-Max (Abs) (ID) :
8A
Gate to Source Voltage (Vgs) :
30V
Transistor Element Material :
SILICON
Mount :
Surface Mount
Nominal Vgs :
4 V
Datasheets
STB8NM60T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB8NM60T4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:STB8N, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, STB8NM60T4 pinout, STB8NM60T4 datasheet PDF, STB8NM60T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB8NM60T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB8NM60T4


N-Channel Tape & Reel (TR) 1 Ω @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB8NM60T4 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 400pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 8A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

STB8NM60T4 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
a threshold voltage of 4V


STB8NM60T4 Applications


There are a lot of STMicroelectronics
STB8NM60T4 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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