STB85NF3LLT4
- Mfr.Part #
- STB85NF3LLT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 85A D2PAK
- Stock
- 27,942
- In Stock :
- 27,942
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 40A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- Series :
- STripFET™ II
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Terminal Form :
- Gull wing
- Base Part Number :
- STB85N
- Power Dissipation :
- 110W
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 130ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 30V
- Operating Temperature :
- -65°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 16V
- Power Dissipation-Max :
- 110W Tc
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±16V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 22 ns
- Current Rating :
- 85A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 245
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 30V
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Pin Count :
- 3
- Fall Time (Typ) :
- 36.5 ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Continuous Drain Current (ID) :
- 85A
- Turn-Off Delay Time :
- 36.5 ns
- Resistance :
- 8mOhm
- Datasheets
- STB85NF3LLT4

N-Channel Tape & Reel (TR) 8m Ω @ 40A, 10V ±16V 2210pF @ 25V 40nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB85NF3LLT4 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2210pF @ 25V.This device conducts a continuous drain current (ID) of 85A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 36.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
STB85NF3LLT4 Features
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 36.5 ns
STB85NF3LLT4 Applications
There are a lot of STMicroelectronics
STB85NF3LLT4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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