STB80NF55-08-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pulsed Drain Current-Max (IDM) :

320A

Avalanche Energy Rating (Eas) :

870 mJ

Pin Count :

3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.008Ohm

Rise Time :

85ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Series :

STripFET™ II

Voltage - Rated DC :

55V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

80A

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STB80N

Input Capacitance (Ciss) (Max) @ Vds :

3850pF @ 25V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Tin

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSIP-T3