STB80PF55T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Terminations :

2

Element Configuration :

Single

Voltage - Rated DC :

-60V

Dual Supply Voltage :

55V

Vgs (Max) :

±16V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Mount :

Surface Mount

Threshold Voltage :

3V

Pbfree Code :

yes

Rise Time :

190ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Width :

9.35mm

Power Dissipation-Max :

300W Tc

Number of Pins :

3

Resistance :

18mOhm

Height :

4.6mm

Drain to Source Breakdown Voltage :

-55V

Terminal Form :

Gull wing

Current Rating :

-300mA

Lead Free :

Lead Free

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

165 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

35 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.4mm

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

80 ns

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Base Part Number :

STB80P

Continuous Drain Current (ID) :

40A

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

18m Ω @ 40A, 10V

Power Dissipation :

300W

Peak Reflow Temperature (Cel) :

245

Series :

STripFET™ II

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

3 V

RoHS Status :

ROHS3 Compliant