STB80NF03L-04T4
- Mfr.Part #
- STB80NF03L-04T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A D2PAK
- Stock
- 14,974
- In Stock :
- 14,974
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 80A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 300W Tc
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 30 ns
- Radiation Hardening :
- No
- Base Part Number :
- STB80N
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 300W
- Pin Count :
- 4
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Element Material :
- SILICON
- Series :
- STripFET™ II
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Fall Time (Typ) :
- 95 ns
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Rise Time :
- 270ns
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -60°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 4.5V
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 80A
- Turn-Off Delay Time :
- 110 ns
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 245
- Resistance :
- 4mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 40A, 10V
- Datasheets
- STB80NF03L-04T4

N-Channel Tape & Reel (TR) 4m Ω @ 40A, 10V ±20V 5500pF @ 25V 110nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB80NF03L-04T4 Overview
A device's maximal input capacitance is 5500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STB80NF03L-04T4 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 110 ns
STB80NF03L-04T4 Applications
There are a lot of STMicroelectronics
STB80NF03L-04T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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